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(Click for frequent words.) 74 gate dielectrics 74 k gate dielectric 73 k dielectric 71 k dielectrics 71 silicide 71 MOS transistors 70 low k dielectrics 70 pMOS 69 nMOS 69 NiSi 69 oxynitride 68 k gate dielectrics 68 hafnium oxide 68 dielectrics 68 gate electrode 67 #nm immersion lithography 67 HfSiON 66 gate dielectric 66 oxide thickness 66 graphene transistors 65 low k dielectric 65 FinFET 65 MOS transistor 65 FUSI 65 AlGaN 65 III nitride 64 SiON 64 high-k/metal gate 64 CMOS transistors 64 HKMG 64 FinFETs 64 CMOS logic 64 tin oxide 64 K dielectrics 64 CMOS compatible 64 #nm silicon 64 CMOS fabrication 64 silicon oxynitride 64 silicon Si 63 copper interconnects 63 optical waveguides 63 dual damascene 63 nanocrystalline 63 metal gate HKMG 63 photonic bandgap 63 planar CMOS 63 nitride 63 PMOS transistors 63 electrically insulating 63 metallisation 63 #nm/#nm 62 gallium selenide 62 Silicon Germanium 62 organic TFTs 62 nanometer silicon 62 MESFET 62 Gallium arsenide 62 mechanical polishing CMP 62 monolithically integrated 62 dielectric materials 62 SOI CMOS 62 #nm CMOS [002] 62 film transistors TFTs 62 silicon germanium SiGe 62 high-k/metal-gate 62 AlGaN GaN 62 epitaxial silicon 62 dielectric layer 62 BEOL 62 CMOS processes 62 multilayers 62 SOI silicon 62 InAs 62 HfO2 62 #nm #nm #nm 61 crystallinity 61 insulator SOI technology 61 threshold voltages 61 Powerful debug 61 Epitaxial 61 JFET 61 Si substrate 61 dielectric 61 insulating substrate 61 SiO 2 61 FDSOI 61 passivation layers 61 amorphous silicon Si 61 silicon 61 nm nodes 61 silicon substrates 61 antimonide 61 ArF immersion lithography 61 NMOS 61 gallium indium 61 thermal conduction 61 GLOBALFOUNDRIES #nm 61 AlN 61 epitaxial layer 61 InGaP 61 #nm node [001] 61 CMOS silicon 60 copper metallization 60 parasitic capacitance 60 #.#μ 60 indium phosphide 60 Insulator SOI 60 dopant 60 multilayer ceramic capacitors MLCC 60 insulator SOI 60 manganite 60 LDMOS RF power 60 CIGS solar cell 60 smaller geometries 60 PHEMT 60 Field Effect Transistors 60 aluminum nitride AlN 60 poly Si 60 nm CMOS process 60 RRAM 60 #.# micron node 60 pentacene 60 #μm thick [002] 60 CIGS copper indium 60 ohmic contacts 60 pHEMT 60 indium phosphide InP 60 hafnium 60 deep sub micron 60 TiN 60 microcrystalline silicon 60 InSb 60 oxide semiconductor 60 titania 60 3Xnm 60 leadframes 60 gallium indium arsenide 59 #.# micron CMOS 59 UVTP 59 chalcogenide 59 silicon germanium 59 through silicon vias 59 HEMTs 59 optically coupled 59 #/#-nanometer 59 solder bumping 59 aluminum nitride 59 conductive polymer 59 titanium nitride 59 dielectric layers 59 BiFET 59 5V CMOS 59 Photolithography 59 heterostructure 59 zinc selenide 59 Schottky 59 ferro electric 59 transparent conductive oxide 59 insulator substrate 59 #nm CMOS [001] 59 electron mobility 59 dielectric constant 59 semiconductive 59 heterostructures 59 insulator wafers 59 epitaxial layers 59 nitride semiconductor 59 passivation layer 59 SIMOX 59 eutectic 59 barium titanate 59 MAX# integrates 59 LiNbO3 59 SiC substrates 59 indium gallium 59 high voltage BCDMOS 59 phototransistors 59 polymer substrates 59 overmolding 59 bismuth ferrite 59 nm SOI 59 gate transistors 59 thinner wafers 59 monocrystalline silicon 59 laterally diffused metal 59 CdSe 59 .# micron 59 LSA#A 58 DMOS 58 IGBT Insulated Gate 58 superlattice 58 Si SiGe 58 ferromagnetic 58 leakage currents 58 CIS CIGS 58 #nm SOI 58 Sigma fxP 58 MEMS resonators 58 transparent electrode 58 GaAs InP 58 ferroelectrics 58 epitaxy 58 silica spheres 58 optical waveguide 58 AlGaAs 58 silicon nitride 58 wafer thickness 58 absorber layer 58 On Insulator SOI 58 atomically smooth 58 cadmium selenide 58 metal insulator 58 defect densities 58 AlGaInP 58 CMOS circuits 58 HEMT 58 silicon CMOS 58 #.#um [001] 58 nm CMOS 58 epitaxial structures 58 ZnO nanowire 58 indium arsenide 58 #.#μm [002] 58 crystalline Si 58 interfacial layer 58 Silicon Nitride 58 selenide 58 furnaceware 58 FeRAM 58 transparent conductive coatings 58 UMC #nm 58 SOI wafers 58 nanometer transistors 58 intermetallic 58 epitaxial wafers 58 multilayer ceramic 58 #/#nm 58 SiGe bipolar 58 metallic nanostructures 58 capacitances 58 sulfonated 58 Through Silicon Vias 58 GaAs MESFET 58 solder bump 58 transparent conductive 58 micrometer thick 57 ZnSe 57 copper indium gallium diselenide 57 Copper Indium Gallium Selenide 57 cadmium sulfide 57 sapphire substrate 57 InGaP HBT 57 Grätzel cells 57 indium gallium phosphide InGaP 57 embedded DRAM eDRAM 57 wafer dicing 57 planarization 57 undoped 57 strontium titanate 57 amorphous silicon 57 weldability 57 pnictides 57 ZnS 57 HKMG technology 57 metal oxide 57 antifuse 57 epi wafers 57 BiCMOS 57 nanocrystal 57 nanochannel 57 heterojunction 57 magnetron sputtering 57 transistor leakage 57 SiC 57 indium tin oxide ITO 57 CIGS cells 57 bandgap 57 doped silicon 57 bipolar transistors 57 reinforced composites 57 conductive adhesives 57 k dielectric materials 57 subwavelength 57 metallic interconnects 57 dielectric deposition 57 ferrite core 57 TSMC #.#um 57 silicon nanowire 57 nm SRAM 57 transparent electrodes 57 nm DRAM 57 submicron 57 nanodots 57 TSMC #nm [001] 57 1μm 57 bipolar transistor 57 crystalline silicon c 57 ReRAM 57 dielectric constants 57 carbene 57 SOI wafer 57 Si Ge 57 microcavities 57 MLCCs 57 gallium indium phosphide 57 reactive ion 57 Raman lasers 57 AlN layer 57 transistor HEMT 57 carbides 57 PEALD 57 foil resistors 57 nanocircuits 57 yttrium barium copper 57 dilute nitride 57 indium gallium phosphide 57 polyamides 57 solderable 57 hydride vapor phase 57 micromorph ® 57 epitaxial 57 #nm DRAM 57 DongbuAnam 57 solder bumps 57 nano crystals 57 photoresists 57 ZnO 57 #.#μm CMOS 57 #nm #nm [005] 57 PZT 57 silicate glass 57 silicon photonic 57 FPGA fabric 57 gelation 56 Oxide Silicon 56 calcium fluoride 56 ferrite 56 Hafnium 56 nanometer node 56 photonic circuits 56 nanofabricated 56 varactors 56 transistor pHEMT 56 permittivity 56 planar 56 multilayer 56 ceramic capacitor 56 ferroelectric 56 selective emitter 56 nanometer CMOS 56 RF transistors 56 CIGS Copper Indium 56 tin Sn 56 #nm HKMG 56 semiconductor nanowires 56 Gallium Arsenide GaAs 56 nm node 56 #nm RF CMOS 56 resistive element 56 absorber layers 56 oxide layer 56 Buried Wordline technology 56 rectifier diode 56 Cadmium Telluride 56 ZnO nanowires 56 nanometer 56 CellMath IP 56 uniaxial strain 56 coextruded 56 SRAM DRAM 56 nano composites 56 silicon oxynitride SiON 56 SiC diodes 56 voltage CMOS 56 2Xnm 56 #nm MirrorBit 56 metallization 56 GAIN HBT 56 semiconducting nanowires 56 #.#μm CMOS process 56 eWLB technology 56 #nm [001] 56 zirconium oxide 56 indium antimonide 56 transistor 56 #nm transistors 56 layer deposition ALD 56 Zener diodes 56 underfill 56 wirewound 56 extreme ultraviolet lithography 56 cored wire 56 #.#um CMOS 56 electron transistors 56 Resistive Random Access 56 APTIV film 56 conductivities 56 hafnium dioxide 56 photonic devices 56 extreme ultra violet 56 vapor deposition 56 polyethylene PEN 56 metalorganic chemical vapor deposition 56 GaP 56 quantum capacitance 56 cadmium sulphide 56 polymer nanofibers 56 Micromorph 56 sputter deposition 56 microstructured 56 ion traps 56 Strained silicon 56 SOI substrate 56 ferrites 56 polycrystalline 56 pulsed laser deposition 56 intermetallic compounds 56 Silicon wafers 56 ACPL K# 56 Aluminum Nitride 56 Schottky barrier 56 programmable SoC 56 GaAs AlGaAs 56 germanium Ge 56 cordierite 56 High Voltage CMOS 56 nanotubes nanowires 56 Indium Phosphide 56 multi walled nanotubes 56 gallium phosphide 56 chip optical interconnects 56 Cu interconnects 56 nanofilm 56 photolithographic 56 indium gallium nitride InGaN 56 silicon foundries 56 metallic alloys 56 thermally stable 56 microfabrication techniques 56 dopants 56 GaN HEMTs 56 chalcogenide glass 56 SOI substrates 56 SAW oscillators 56 geometries shrink 56 #LP [002] 56 CIGS solar 56 silicon oxide 56 substrate 56 semiconducting properties 56 EO polymer 56 Silicon carbide 56 nanomesh 56 Photonic crystals 56 copper indium diselenide 56 tantalum nitride 56 aluminum gallium nitride 56 polyacrylonitrile 56 line BEOL 56 poly silicon 56 reconfigurable logic 56 parasitic inductance 56 Si substrates 55 multichip 55 nitrided 55 ceramic membranes 55 C0G 55 photomultipliers 55 cemented carbides 55 chalcogenides 55 nanosprings 55 epitaxial deposition 55 FEOL 55 electron tunneling 55 SiC Schottky diodes 55 LPCVD 55 multiferroic 55 sSOI 55 advanced leadframe 55 nanotube arrays 55 photoresist 55 planar waveguide 55 dimensional nanostructures 55 #nm SRAM 55 silicon nanocrystals 55 intergranular 55 TFTs 55 iCoupler 55 polyimides 55 nonlinear optical 55 e beam lithography 55 millisecond annealing 55 Ti TiN 55 CVD diamond 55 wirebond 55 pseudo SRAM 55 FETs 55 microcavity 55 EVOH 55 TSMC #nm process 55 optically transparent 55 laminations 55 copper nanorods 55 electrocatalysts 55 eutectic solder 55 high-k/metal gate HKMG 55 cathode materials 55 clockless 55 Electron Mobility Transistor 55 copper indium 55 VCOs 55 polymer matrices 55 integrated passives 55 electro deposition 55 SiGe C 55 GaN HEMT 55 block copolymers 55 InN 55 SiGe 55 annealing 55 vanadium oxide 55 copolymers 55 serdes 55 semiconducting 55 photocatalysts 55 nanoribbons 55 insert molding 55 electroless copper 55 nitrides 55 compressive stress 55 transistor circuits 55 TrenchFET 55 Schottky diode 55 Gallium Arsenide 55 effect transistor FET 55 semiconductor nanostructures 55 transistor arrays 55 Indium phosphide 55 polymer membranes 55 microreactors 55 nitrogen doped 55 dielectric etch 55 lithographic techniques 55 Ultem 55 catalytic reactions 55 lattice mismatch 55 PEDOT PSS 55 nanobelts 55 paramagnetic 55 LTPS TFT 55 nanocluster 55 cementite 55 di selenide CIGS 55 millisecond anneal 55 5μm 55 titanium carbide 55 RFCMOS 55 oxide nanoparticles 55 supramolecular 55 nanocomposite material 55 capacitors inductors 55 dimensional planar 55 ARM9 core 55 nanoporous 55 silanes 55 graphene layers 55 Cadence Encounter RTL Compiler 55 germanium substrates 55 lithium niobate 55 PIN photodiode 55 martensitic 55 monodisperse 55 GaN transistor 55 copper indium gallium selenide 55 transparent conductive oxides 55 nitride layer 55 MWNT 55 alloying elements 55 photonic integrated circuits 55 CIGS photovoltaic 55 metallic nanoparticles 55 damascene 55 indium nitride 55 indium gallium arsenide 55 tantalum capacitors 55 antireflective coatings 55 polariton 55 extruded profiles 55 BJTs 55 electrodeposition 55 Perkinamine 55 polymerisation 55 nonconducting 55 Josephson junctions 55 polymer matrix 55 SiC wafers 55 silicon transistors 55 hermetic packaging 55 AccelArray 55 Gallium nitride 55 nanomagnets 55 siloxane 55 OTFT 54 austenitic stainless steels 54 nanopowder 54 pore sizes 54 capacitors resistors 54 plasma etching 54 HTS wires 54 nanometric 54 #nm MLC 54 microfabrication 54 epitaxy HVPE 54 solder reflow 54 oxide 54 parasitic capacitances 54 SST SuperFlash technology 54 CBT resin 54 finer geometries 54 gallium nitride GaN 54 VECTOR Express 54 Complementary Metal Oxide Semiconductor 54 spintronic 54 polyvinyl chloride resin 54 Memristors 54 BGA packaging 54 thermally activated 54 microelectronic devices 54 photodetectors 54 bilayer 54 nanocrystalline silicon 54 ferritic 54 copper damascene 54 fused silica 54 GaAs HBT 54 nm 54 ultrathin layer 54 thermoplastic polyester 54 polyphenylsulfone 54 nanopatterns 54 liquid crystal polymer 54 carbon nanotube CNT 54 bismuth telluride 54 CMOS circuitry 54 thermal conductivities 54 nanochannels 54 density interconnect HDI 54 bandgaps 54 Transparent Conductive Oxide TCO 54 breakdown voltages 54 Organic Chemical Vapor 54 PIN diodes 54 crystalline lattice 54 CMOS oscillators 54 vinyl esters 54 millimeter silicon wafers 54 polydimethylsiloxane PDMS 54 Carbon nanotube 54 CMP slurry 54 passivation 54 InGaN 54 block copolymer 54 anisotropic 54 Micron Boise Idaho 54 ferroelectric random access 54 SnO2 54 nickel titanium alloy 54 nanowire arrays 54 gasketing 54 microcrystalline 54 TSV etch 54 PIN photodiodes 54 nanowire transistors 54 Stanyl 54 polymeric membrane 54 nanoimprinting 54 dye sensitized 54 electron transistor 54 twin screw extruder 54 #nm lithography [002] 54 waveguides 54 perovskite 54 finFETs 54 OTFTs 54 #.#μm [001] 54 UV lasers 54 conductive epoxy 54 indium gallium arsenide InGaAs 54 electrolytic capacitors 54 fpgas 54 piezo ceramic 54 GaN layer 54 Germanium Ge 54 thermoplastic polymer 54 nanometer nm 54 interparticle 54 #.#V CMOS 54 titanate 54 SWCNT 54 optofluidic 54 Si wafers 54 superlenses 54 silicon modulators 54 Stratix III FPGAs 54 diffractive optical elements 54 niobium titanium 54 semiconducting nanotubes 54 nanoelectronic devices 54 #nm immersion 54 CyberDisplay #K 54 bilayer graphene 54 Arsenide 54 QuickCap NX 54 multilayer printed 54 heavy fermion 54 multijunction solar cells 54 bicomponent 54 bipolar CMOS DMOS 54 multijunction 54 4Gb DDR3 54 backside metallization 54 imprint lithography 54 nano imprint lithography 54 diameter wafers 54 bistability 54 Copper Indium Gallium 54 thermally conductive 54 thermal gradients 54 molecular sieves 54 GaN LEDs 54 SWNT 54 crosslinking 54 mesoporous 54 FPCs 54 fluoropolymer 54 ferromagnet 54 mixed signal RFCMOS 54 Ti 4V 54 ferrite beads 54 YBCO 54 P3HT 54 UHMW PE 54 deep ultraviolet DUV 54 THz frequencies 54 immersion lithography 54 alkynes 54 micromachined 54 microstrip 54 Structured ASICs 54 SOI Silicon 54 topological insulators 54 hetero junction 54 crystallites 54 Czochralski 54 copper indium gallium 54 donor acceptor 54 cathodic 54 Solido Variation Designer 54 antiferromagnetic 54 surface passivation 54 nonmagnetic 54 deep submicron CMOS 54 oxide thickness EOT 54 interdigitated 54 nanostructured silicon 54 oxide semiconductors 54 silicon photovoltaics 54 Silicon Oxide Nitride 54 exotic alloys 54 gallium arsenide gallium nitride 54 encapsulant 54 Low Leakage 54 nanoscale patterning 54 etching DRIE 54 deep submicron 54 silicon dioxide 53 pellicle 53 chipscale 53 #nm lithography [001] 53 semiconducting material 53 varistor 53 Bragg grating 53 downgauging 53 DSSCs 53 nanostructured surfaces 53 computational lithography 53 nm immersion lithography 53 MTCMOS 53 ceramic substrate 53 conductive polymers 53 Nitride 53 electroless plating 53 substrates 53 mask aligner 53 Inductors 53 GaN wafers 53 AlSiC 53 nanoparticle inks 53 ferromagnetic materials 53 #nm nodes 53 capacitively coupled 53 InGaAs 53 Ruthenium 53 X7R 53 gallium arsenide 53 Vsby 1 53 polydimethylsiloxane 53 magnetic permeability 53 superconductor wire 53 aluminum gallium indium 53 laser annealing 53 CMOS ICs 53 graphene nanoribbons 53 PMICs 53 MirrorBit NOR 53 amorphous silicon TFT 53 ceramic dielectric 53 Cadmium telluride 53 CdTe solar 53 NMOS transistors 53 ultrananocrystalline diamond 53 GaAs substrates 53 heterojunction bipolar transistor HBT 53 electrons tunneling 53 ultrahigh purity 53 #nm geometries 53 passivating 53 geometries 53 crystalline silicon photovoltaic 53 nanophotonic 53 ADCs DACs 53 aramid fiber 53 #.#um [002] 53 microchannel plate 53 cadmium selenium 53 CNT arrays 53 tellurium selenium iridium 53 CIGS photovoltaic PV 53 tunable filters 53 CMOS 53 quantum dot lasers 53 planar lightwave circuits 53 MWNTs 53 #μm [002] 53 carbon nanotube arrays 53 self assembled monolayers 53 MOSFETS 53 SiO2 53 VICTREX PEEK 53 Gallium nitride GaN 53 dewetting 53 monosilane 53 carbon nanostructures 53 nano imprint 53 polybutylene terephthalate 53 VCSELs 53 polybutylene terephthalate PBT 53 intermolecular 53 ceramic resonators 53 mosfet 53 solution processable 53 impedances 53 nm lithography 53 electroluminescence EL 53 DDR PHY 53 germanium 53 NdFeB 53 nickel hydroxide 53 silicon crystals 53 MEMS oscillators 53 anneal 53 nanostructured 53 phthalocyanine 53 CIGS PV 53 monolayers 53 Flexfet 53 nanostructure 53 iron pnictides 53 biaxially oriented polypropylene 53 Polycrystalline 53 carbon nanofibers 53 TGA# SL 53 homogeneous catalysis 53 polymer composite 53 patterning technique 53 4H SiC 53 silicon waveguides 53 resistor capacitor 53 circuit MMIC 53 polarized electrons 53 excitonic 53 1Gbit DDR2 53 X5R 53 capacitive coupling 53 nanopillars 53 anodic 53 photoresist stripping 53 Ferroelectric 53 Esatto Technology 53 organometallic 53 backsheet component 53 microfluidic chips 53 liquid crystal polymers 53 martensite 53 silicon substrate 53 Encounter RTL Compiler 53 2μm 53 Spintronic 53 design kits PDKs 53 linewidths 53 Mosfets 53 conductive coating 53 thermosets 53 clad laminates 53 ARM#EJ S processor 53 epiwafer 53 epitaxial wafer 53 nanostructuring 53 cobalt atoms 53 #.#u 53 engineered substrates 53 optocoupler 53 silicon chips 53 photodetector 53 antiferromagnets 53 resonant tunneling 53 electroactive 53 μm thick 53 dopant atoms 53 silicon etch 53 self assembled monolayer 53 polybutadiene 53 atomically thin 53 Cree GaN 53 Flip Chip 53 eutectic alloy 53 GaAs substrate 53 Si PV 53 polyvinylidene fluoride 53 HBLEDs 53 titanium oxides 53 melt viscosity 53 calcium magnesium phosphorus 53 polyimide 53 emission wavelength 53 nanometer lithography 53 nanowire 53 UNCD 53 nanoscale transistors 53 DFM DFY 53 RF LDMOS 53 GaAs gallium arsenide 53 CMOS transistor 53 EMI Filters 53 Field Effect Transistor 53 TSMC Hsinchu Taiwan 53 Soitec produces 53 vanadium dioxide 53 GaAs pHEMT 53 micromorph 53 graphene transistor 53 rigid foams 53 InP substrates 52 thyristor 52 InP 52 encapsulant sheets 52 ferrite materials 52 Indium Phosphide InP 52 sintered 52 glass substrate 52 FPGA architectures 52 JFETs 52 nonvolatile memories 52 fuel cells SOFCs 52 hydride 52 electroless 52 Actel FPGA 52 VUV 52 MirrorBit Quad 52 thermodynamically stable 52 demagnetization 52 SiPs 52 CIGSe 52 nanomembranes 52 digital optocouplers 52 heterogeneous catalysts 52 CMOS RF CMOS 52 spiral inductors 52 polymer fibers 52 #nm photomask 52 EUV resists 52 matrix composites 52 coplanar 52 Josephson junction 52 #.#um CMOS process 52 zinc oxide ZnO 52 photolithography 52 Ge substrates 52 mobilities